A first portion of the second layer (2) is transformed into a buried isolation region (15) comprising a first electrically insulating material.

将第二层(2)的第一部分转换为包括第一电绝缘材料的埋入绝缘区域(15)。

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The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.

该半导体器件包 括具有有源区和限定了有源区的器件隔离区的半导体衬底，以及形成于有源区上方的电阻串。

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The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.

该半导体器件包 括具有有源区和限定了有源区的器件隔离区的半导体衬底，以及形成于有源区上方的电阻串。

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