Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized.
当施加反向偏置电压时，形成的耗尽层厚度变大，从而使热载流子的产生减到最小。
More detailed discussions on self-heating and hot carriers effects are made as well as comparisons between them. The recovery phenomena under reverse mode are also introduced.
本文针对目前研究较多的自加热退化和热载流子退化机制做了更深入的探讨，比较了两者的差别，并介绍了它们在反转模式下出现的退化恢复现象。
More detailed discussions on self-heating and hot carriers effects are made as well as comparisons between them. The recovery phenomena under reverse mode are also introduced.
本文针对目前研究较多的自加热退化和热载流子退化机制做了更深入的探讨，比较了两者的差别，并介绍了它们在反转模式下出现的退化恢复现象。
应用推荐