The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
I love better than any theory the sound of the Gate of Ivory, turning upon its hinges, and hold that he alone who has passed the rose-strewn threshold can catch the far glimmer of the Gate of Horn.
比起理论来，我更喜欢象牙之门的声音，喜欢聆听铰链的转动，并相信，倘若一个人能越过撒满玫瑰的门槛，他便能望见远方牛角之门的微光。
And every little chamber was one reed long, and one reed broad; and between the little Chambers were five cubits; and the threshold of the gate by the porch of the gate within was one reed.
又有卫房，每房长一竿，宽一竿，相隔五肘。门槛，就是挨着向殿的廊门槛，宽一竿。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
A combinational structure of the transmission gate in the inverter control with different threshold voltages is presented.
提出了一种不同阈值电压反相器控制的传输门组合结构。
Realization of Boolean function base on threshold logic gate is always studied by researchers because its strong function and special advantage.
阈值逻辑门具有很强的逻辑功能及独特的优点，用阈值逻辑门实现数字逻辑函数也一直受到关注。
The tool may generate fabrication masks for the given design that include mixed gate transistors with threshold voltages optimized to meet circuit design criteria.
该工具可以产生用于特定设计的制造掩模，该设计包括具有优化的阈值电压的混合栅极晶体管以符合电路设计标准。
MM5483 is a monolithic integrated circuit utilizing CMOS metal-gate low-threshold enhancement mode devices.
MM5483是一款单片集成电路，采用CMOS金属栅极的低阈值增强模式器件。
QBTL is designed specially for use as a four-valued threshold gate with which varied four-valued composite logic circuits can be formed.
其中QBTL设计成可单独作为四值“阀”门使用，用于构成其他四值组合逻辑。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
In addition, the threshold voltage is capable of being finely tuned with a proper gate bias .
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。
A new three-valued logic (TVL) threshold gate circuit simple in structure and suitable for IC manufacturing is described. A three-valued t gate IC for multiple purposes is designed.
本文介绍了一种结构简单、适于集成化的三值“阈”门电路，并设计了一个多功能三值T门集成电路。
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
Threshold logic Gate (TLG) is receiving much attention because of its logic versatility and functionally complete.
阈值逻辑门由于具有强大的逻辑功能且独自构成完备集而备受关注。
Threshold logic Gate (TLG) is receiving much attention because of its logic versatility and functionally complete.
阈值逻辑门由于具有强大的逻辑功能且独自构成完备集而备受关注。
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