But it provides too small emission current density and gives a large gate current.
但不足之处是发射电流密度太小和有较大的栅极电流。
The gate current is produced by the tunneling, the electron surmounting and percolation.
发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透。
Once the device begins to conduct, it is latched on and the gate current can be removed.
一旦器件(晶闸管)导通，门极电流即可去掉。
By reducing the resistance of gate-circuit, the gate current reaches 5 mA sooner, and the SCR fires earlier in the ac cycle.
通过减小栅极电路的电阻，栅极电流达到5毫安越早，和SCR之前在AC周期闪光。
The paper gives the current and voltage waveforms of multi GTO devices at turn-off, analyzes and compares the waveforms of gate current and voltage.
给出了多个GTO元件关断时的电流、电压波形。 并对其门极电流、电压波形进行了分析和比较。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.
通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET ' s热载流子损伤的生长规律。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Reasonable designs of the structure parameters of PB layer and the gate-cathode geometry are obtained by numerical iteration and an equivalent current model.
文中采用数值迭代法和建立等效电流模型，对P_B层结构参数和门极-阴极几何图形尺寸进行了合理设计。
Then the all basic-circuits are also designed and simulated carefully including active resister, current mirrors, comparator, inverter, AND gate, OR gate.
其次对集成电路内所需要的基本模拟及数字电路如有源电阻、电流镜、电压比较器、与门及或门进行了设计和仿真。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
Heavy traffic surges past the historical landmark Dongdaemun— the Great East Gate—in central Seoul. Originally built in 1396, the current structure was reconstructed in 1869.
图片画廊。拥挤的交通运输经过古迹东大门—伟大的东大门—在首尔的中心。原来建于1396年，最近的建筑物是重建改造在1869年。
The output characteristics also make the AD590 easy to multiplex: the current can be switched by a CMOS multiplexer or the supply voltage can be switched by a logic gate output.
这种输出特性还便于AD590实现多路复用：输出电流可以通过一个CMOS多路复用器切换，或者电源电压可以通过一个逻辑门输出切换。
However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.
但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。
Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
The design of chimney and air current, the gate of fire way, the laying of fire box and adjustment of the flame height, were the key factors of fire way.
烟囱设计、气流控制、火路通口、灶塘铺设及吊火高度，为火路关键技术。
The main techniques used to decrease static power are:reduce current from substrate and mosfet gate.
减少静态功耗的主要技术是降低衬底电流和栅电流等。
Additional features include: programmable transition delay, low quiescent current, higher efficiency at light loads, and high speed control to quickly turn off both gate drivers.
其它附加功能包括：可编程跳变延时、低静态电流、在轻载时提供更高的效率，以及快速关断两个驱动器的高速控制。
Having a better-functioning gate also lets more current flow when the transistor is on.
同时还能在晶体管开启时通过尽可能多的电流。
For gate oxide breakdown OTP memory, we present a viable NOR array structure and current sense amplifiers.
针对栅氧化层击穿otp存储单元提出了可行的阵列结构和电流敏感放大器。
Over-current protection circuits convert the detecting current into the gate voltage which controls the switch FET.
过流保护电路将检测电流转化为栅压控制开关管；
The output power and drain current increase as the gate voltage increases.
输出功率和漏电流增加的栅极电压的增加。
When the AC voltage applied to the anode rises in the positive direction, current flows through the gate-cathode section of the SCR.
当施加到阳极的交流电压上升，在正方向上，电流流经可控硅的栅极-阴极部分。
Owing to the connection of the main current path and the gate driving path in discrete form, the influence of parasitic inductance can be reduced and voltage conversion efficiency can be improved.
由于以分 立的形式连接主电流通路和栅极驱动通路，因此可以减小寄生电感的影响，并提高电压变换效率。
Designed exclusively for use with the 2013 Series Gate Lock, its two-piece design includes an adjustable armature mounting bracket that is configured for the current generation armature housing.
其独特的双层设计是由一个可调节的底座架构而成，可以根据目前的转子位置对此底座进行配置。
Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.
器件的发光强度有所提高，但栅压对载流子的控制作用不理想。
Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.
器件的发光强度有所提高，但栅压对载流子的控制作用不理想。
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