But it provides too small emission current density and gives a large gate current.
但不足之处是发射电流密度太小和有较大的栅极电流。
The gate current is produced by the tunneling, the electron surmounting and percolation.
发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透。
Once the device begins to conduct, it is latched on and the gate current can be removed.
一旦器件(晶闸管)导通，门极电流即可去掉。
The paper gives the current and voltage waveforms of multi GTO devices at turn-off, analyzes and compares the waveforms of gate current and voltage.
给出了多个GTO元件关断时的电流、电压波形。 并对其门极电流、电压波形进行了分析和比较。
The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.
通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET ' s热载流子损伤的生长规律。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
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