A simple approach is presented to analyse a typical high frequency transistor stage.
本文介绍一种简便分析典型晶体管高频电路的方法。
The microwave transistor laser model is very accurate for predicting frequency-dependent electrical and optical properties.
微波晶体管激光模型可以非常准确的预测频变电和光的属性。
In a drive system of power transistor inverter-motor, not only can it be used in fine control of motor current waveform, phase, amplitude and frequency, but can also be used to sense, fault current.
在大功率晶体管逆变器——电动机驱动系统中，它不但可用来对电动机电流的波形、相位、幅值和频率进行精细控制，而且能快速地检测出故障电流。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
An improved plan of silicon controlled rectifier (SCR) line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.
详细地介绍了可控硅整流器(SCR)线型触发器的改进型设计方案，提出了用于高脉冲重复频率的双极晶体管触发器的实用新电路。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
A unique new method is advanced for obtaining the transistor characteristic curves clearly and stably, s parameters and the frequency matching parameters with the transistor individuality.
提出了为清晰、稳定地获得高频下晶体管特性曲线、S参量以及具有晶体管个性的特征频率匹配参数的一种独特的新方法。
When the components, such as resistor, capacitor, inductor, diode and transistor are used in the high-frequency circuits, they have their own high-frequency equivalent models.
为了进一步分析实验中具体电路的实际情况，首先要建立分立元器件的高频等效模型。
In this paper, the failure analysis of a type of high frequency power transistor is introduced.
介绍了对某型号高频大功率晶体管进行的失效分析。
PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶体管。低频功率放大器。
Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor.
介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)的方法。
In chapter six, the application of higher order statistics in detection low-frequency noise of transistor is discussed.
第六章研究了高阶统计量在晶体管低频噪声检测中的应用。
The high-speed digital frequency mixer made of medium-scale integrated circuits and the design of a high power transistor amplifier are also presented.
介绍了高速中规模集成数字频率合成器、晶体管高频大功率放大器的设计。
Transit time is the primary factor which limits the ability of a transistor to operate at high frequency.
渡越时间是限制晶体管高频工作能力的主要因素。
The diameter, length, arch height and space of bond-wires have great impacts on the radio frequency performance of RF power transistor.
键合线的直径、长度、拱高和并列键合线间距等物理参量，均对器件性能有很大影响。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…
该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…
该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
应用推荐