The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.
实验结果证明IGBT的下降时间随着外延层厚度的增加而增加。
The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.
实验结果证明IGBT的下降时间随着外延层厚度的增加而增加。
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