The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
But there are also some disadvantages, such as the reducing of drain current driving capability and the increasing of parasitic capacitance.
但同时也有一些不足，如漏极驱动能力降低以及寄生电容增大的问题。
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
The result of calculation indicated that the attenuation of source-drain current caused by the source-drain resistance increased when temperature increased.
对寄生的漏源串联电阻及其温度特性进行了详细探讨，计算结果表明，漏源串联电阻给漏源电流造成的衰减在温度升高后变得很大。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
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