Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.
场效应晶体管，特别是双扩散场效应晶体管，及其制造方法。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
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