• The uniform sol gel derived silicon dioxide film was prepared under optimal conditions. DFVP was applied to etch this film. The photolithography patterns was obtained due to the different etch

    并将无显影气相光刻方法应用这种二氧化硅刻蚀,通过优化后的光刻工艺参数得到了反差明显的光刻图形

    youdao

  • The uniform sol gel derived silicon dioxide film was prepared under optimal conditions. DFVP was applied to etch this film. The photolithography patterns was obtained due to the different etch

    并将无显影气相光刻方法应用这种二氧化硅刻蚀,通过优化后的光刻工艺参数得到了反差明显的光刻图形

    youdao

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