• Let's look first at the physical size of CCD or CMOS sensor used to capture your photographs.

    首先我们来看看CCD或是CMOS的物理尺寸吧。

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  • Fabricated with 90-nanometer low-power CMOS technology, the 32-bit PowerPC e300-based multimedia SoC is clockable up to 400MHz.

    这个基于PowerPCe300的32位多媒体SoC采用90纳米的低功耗CMOS技术制程,时钟频率400MHz。

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  • Generally, this memory is called CMOS, although it's not strictly required that it actually be implemented using that technology.

    通常来说,这种内存都称为CMOS,尽管它们并非严格要求使用这种技术来实现。

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  • Though CMOS imaging technology is making inroads in consumer technology, there’s “still nothing like a huge CCD,” Tyson said, for high-end science.

    Tyson认为:尽管CMOS成像技术正在走入消费电子,但是对于高端科学领域而言,“还没有东西比得上巨型CCD”。

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  • Due to the diversity of the faults and manufacturing defects in CMOS IC, some of the faults can neither be defected by voltage test nor by IDDQ test.

    由于CMOS集成电路中的故障和制造缺陷是多种多样的,其中有些故障既不能被电压测试也不能被稳态电流测试方法检测出来。

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  • CMOS dual and quad analog switch.

    CMOS双路和四路模拟开关。

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  • The others are basic CMOS cell circuits.

    其余为常见的CMOS单元电路。

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  • Thesensor is fabricated by the conventional CMOS process.

    该传感器由通用的CMOS工艺制成。

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  • CMOS switch which can work in ultra low power supply is designed.

    设计一种能够工作在超低电源电压下的CMOS开关。

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  • The circuit is simple and compatible with traditional CMOS processes.

    该电路结构简单,制造工艺与传统的CMOS工艺兼容。

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  • This paper presents the design method of a novel CMOS current conversion.

    提出了一种新型的CMOS电流转换电路的设计方法。

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  • This paper concentrates on using gated-clock in low-power design of CMOS circuits.

    阐述了如何运用门控时钟来进行CMOS电路的低功耗设计。

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  • The paper introduced a design of CMOS amplifier that is used in small signal testing.

    本文介绍了一个基于低频小信号检测应用的CMOS放大器的设计。

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  • Based on P-well CMOS processes, a novel differential CMOS current conveyor is presented.

    基于P阱CMOS工艺提出了一种新的差动输入电流传送器。

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  • This circuit structure is simple and can be realized by the standard CMOS process easily.

    该电路结构简单,易于实现,且制作工艺与标准CMOS工艺完全兼容。

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  • The inductor and capacitor in CMOS process is an important issue in designing LNA and VCO.

    CMOS工艺的电容和电感是设计lna、VCO等射频电路需要考虑的重要问题。

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  • In the digital image performance testing system of CMOS camera, defect detection is crucial.

    在CMOS摄像头数字图像性能检测系统中,疵点检测是关键内容。

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  • A methodology to synthesise continous-time current-mode filters using CMOS OTAs is presented.

    本文提出了利用CMOSOTA综合连续时间电流模式滤波器的方法。

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  • A new low-voltage low-power CMOS voltage reference operating in subthreshold region is presented.

    提出了一种新型的低电压、低功耗、工作在亚阈值区的基准电压源。

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  • The synthesis technique for multivalued CMOS circuits based on transmission function theory is discussed.

    本文讨论了基于传输函数理论的多值CMOS电路综合技术。

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  • A column readout circuit to reduce fixed pattern noise (FPN) for CMOS active pixel sensor images is presented.

    针对CMOS有源像素传感器,提出一种降低固定模式噪声(FPN)的列读出电路。

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  • The system design and implementation methods of timing control circuit for a new CMOS image sensor are proposed.

    本文主要论述了CMOS图像传感器时序控制电路的系统设计和实现方法。

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  • The multiplexer can be constructed from either mechanical switches or solid-state devices (such ad CMOS switches).

    多路开关可以用机械开关或者固态器件(例如CMOS)开关构成。

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  • And it is a type of integrated circuit produced by CMOS technology, which can process digital -analog mix signals.

    它是采用CMOS工艺制成的数字-模拟混合信号处理集成电路,是一种颇具发展前景的新型电子器件。

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  • Guided by the switch signal-theory, how to realize the threshold controlling in current-mode CMOS circuits is studied.

    以开关信号理论为指导,对电流型CMOS电路中如何实现阈值控制进行了研究。

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  • This paper describes the mechanism of radiation for CMOS IC, and gives out the method of design for radiation hardened IC.

    本文叙述了CMOS集成电路的辐射损伤机理,并给出抗辐射加固集成电路的设计方法。

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  • CCD and CMOS image sensors each have strengths and weaknesses coming from their architecture or their fabrication process.

    CCD与CMOS图像传感器由于结构和制造过程的不同而存在各自的优势与劣势。

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  • Furthermore, the design thinking and the characteristics of structure and working principle of ac CMOS gates are introduced.

    然后介绍了交流CMOS门电路的设计思想及结构与工作原理上的特点。

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  • In this paper the MTF system, using a new counting method and CMOS sensor as device for image reception, is discussed in detail.

    本文详细讨论了一种采用全新计算方法,并以CMOS为图像接收器件的调制传递函数测量系统。

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  • The major shortcomings of CMOS Digital Integrated Circuit concentrate on two primary parameters: input current and supply current.

    CMOS数字集成电路的各种缺陷集中地反映在输入电流和电源电流这两个参数上。

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