应用此模型，既能有效方便地研究分析界面特性对电子迁移率的影响，又为将来的电路模拟打下了基础。
The model can be used to study and analyze influences of interface characteristics on electron mobility and is also a basis of circuit simulations in the future.
研究结果表明：在高温段2DEG 的迁移率主要受LO声子散射限制；在室温，异质界面处的非均匀压电极化场对2DEG。
The results indicate that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures.
研究结果表明：在高温段2DEG 的迁移率主要受LO声子散射限制；在室温，异质界面处的非均匀压电极化场对2DEG。
The results indicate that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures.
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