因为特征尺寸的缩小意味着栅氧层的变薄，更小的电压就能够击穿器件的栅氧层；
The smaller feature size means thinner gate oxide, smaller voltage that gate oxide can endure.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。
However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.
不锈钢毛虽然用作阴极氧还原产电生物反应栅（CORE-PRB）的电极材料虽然有很多优点，但是反应电流较小。
The current of stainless steel cathodic oxygen reduction electricigenic permeable reactive barrier (CORE-PRB) is limited though stainless steel fiber has many advantages to act as the electrodes.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
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