本发明公开了存储器单元阵列，以多行与多列排列。
The invention discloses a memory cell array arranged multiple in rows and lines.
本发明公开了一种位于基底上的电阻式存储器单元和电阻式存储器阵列。
The invention is directed to a resistive memory cell on a substrate and a resistive memory array.
所述存储器阵列包括M行和N列存储器单元以及列虚设单元。
The memory array includes M rows and N columns of memory cells and a column of dummy cells.
一种电荷陷获非易失存储器单元的阵列，排列为多列单元，且每一列为串联安排，如NAND串。
An array of charge trapping nonvolatile memory cells is arranged in several columns of cells, each arranged in a series, such as a NAND string.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
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