该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
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