Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states.
另一实施例包括施加较低的编程电压,以将所述最末字线的存储器单元编程为选择物理状态。
Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states.
另一实施例包括施加较低的编程电压,以将所述最末字线的存储器单元编程为选择物理状态。
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