Another embodiment includes applying a lower program voltage to program memory cells of the last word line to select physical states.
另一实施例包括施加较低的编程电压，以将所述最末字线的存储器单元编程为选择物理状态。
One exemplary embodiment includes using a lower threshold voltage verify level for select physical states when programming the last word line to be programmed for a string during a program operation.
一示范性实施例包括：当在编程操作期间对一串中的将被编程的最末字线进行编程时，使用用于选择物理状态的较低阈值电压检验电平。
One exemplary embodiment includes using a lower threshold voltage verify level for select physical states when programming the last word line to be programmed for a string during a program operation.
一示范性实施例包括：当在编程操作期间对一串中的将被编程的最末字线进行编程时，使用用于选择物理状态的较低阈值电压检验电平。
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