Gas plasma technology can be used to clean pads prior to wire bonding to improve bond strengths and yields.
气体等离子技术能够用于在引线键合前清洗焊盘以改进键合强度和成品率。
From the view of wire bonding, the whole procedure consists of two states: the free motion and the constrained motion.
从引线键合运动的角度来说，完整过程包括两种不同的运动状态：自由运动和约束运动。
Set up ultrasonic wire bonding laboratory.
成立超声波电子焊接实验室。
That BP network used for predicting quality of wire bonding is feasible and valid.
BP网络用于金丝键合质量的预报具有可行性和有效性。
Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method.
丝焊方法，半导体器件，丝焊的毛细管及球块形成方法。
This study is intended to evaluate the bondability and reliability of single crystal copper wire bonding.
本研究的目的是评估单晶铜引线接合的接合性和可靠性。
The cost of wire bonding chips and solder bumped flip chips on boards or on organic substrates is stated.
纯锡焊料凸块和含钴底部凸块金属焊层结合可延长无铅焊接倒装片的寿命。
Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.
金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。
Thermal-structural analysis was performed for ultrasonic wire bonding(UWB) by three dimensional finite element method(FEM).
用三维有限元方法对超声波线焊进行了瞬态的热-结构分析。
Finally, wire bonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.
最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。
If the Al film on the bond pad is pierced through by the probe in wafer probing, the wire bonding strength and device reliability would be affected.
在芯片测试中，若引线焊盘上的铝层被探针扎穿，就会影响引线键合的牢固性和器件的可靠性。
An IC chip is mounted by flip chip or wire bonding or adhesive connection on the face of the metal substrate which has the dielectric coating thereon.
IC芯片以倒装焊接或金属线焊接或粘贴连接安装于金属基片的有介质涂层的表面。
According to the circuit of ultrasonic wire bonding experiment platform, a piezoelectric transducer (PZT) driver signal acquisition circuit was designed.
根据超声引线键合实验平台电路结构，设计了PZT(压电陶瓷)驱动信号采集电路。
It is difficult to guarantee the quality by earlier checking, so the wire bonding is one of the key factors affecting the SAW filter's performance and reliability.
由于内连质量很难通过中间过程的检测完全确定，因此，内连技术成为影响SAW器件性能和可靠性的关键之一。
Several silk materials including gold silk, copper silk and aluminum silk used as conductor in wire bonding technology in electronics packaging materials were introduced.
介绍了电子封装材料中用于引线键合工艺的几种主要导电丝材料，包括金丝、铜丝和铝丝。
As the demand increasing steadily for small volume, high density and high heat-dissipation rate IC, the key parameter of wire bonding — pad pitch has to shrink in accordance.
由于市场对小体积、高集成度和高散热率芯片的需求量与日俱增，引线键合工艺的关键参数——焊盘间距也不断缩小以满足市场要求。
Statistical process control (SPC) technique is used to improve quality and reliability of microelectronic products, and monitor production conditions of wire bonding process.
采用统计过程控制(SPC)技术，提高微电路产品的质量和可靠性，监控键合工序的生产过程状态。
The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.
将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等，并对它们的优缺点进行了分析。
The result shows that the plastic strain at the heel region induced by wire bonding process, molding process and the thermal stress and strain in solder reflow are the main causes of heel crack.
结果显示由于引线键合工艺、注塑工艺以及回流焊中封装体各部分不同的热膨胀系数引起的热应力和塑性变形是产生引脚跟断裂的主要因素。
The wire bonding failure of devices is mainly shown as the breaking off of wire bonded on the packages after temperature test, and the failure causes are related to wire bonding process and materials.
器件键合失效主要表现为温度试验后管壳上的键合点脱落，而引起失效的原因与工艺过程和键合所涉及的材料有关。
Wire bonding is a critical technique for realizing microwave hybrid circuit.
引线键合是实现微波混合电路的关键技术。
Wire bonding is still the most popular interconnect technology in the first-level packaging.
一级封装中最流行的互连技术仍为丝焊。
The results show that there is not any evidence of silver migration within LTCC construction, and conductor adhesive force, wire-bonding strength and insulation resistance are high.
结果表明：基板内部的银导体不存在迁移现象，导体的附着力、键合强度以及基板的绝缘电阻等性能均比较理想。
The results show that there is not any evidence of silver migration within LTCC construction, and conductor adhesive force, wire-bonding strength and insulation resistance are high.
结果表明：基板内部的银导体不存在迁移现象，导体的附着力、键合强度以及基板的绝缘电阻等性能均比较理想。
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