The influences of optical phonon modes on polaron self-trapping energies as functions of well width are given respectively.
同时给出光学声子对极化子自陷能影响随阱宽的变化关系。
The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
With different barrier width, barrier height, sub-well width, spacer width and n-doping concentration, the changes of DC characteristics of DBRTDs are observed and analyzed.
当势垒厚度、势垒高度、子阱厚度、间隔层厚度、掺杂浓度改变时，可以观察到DBRTD直流特性也随之改变。
But as the well width increase, level filling is the main reason for the red-shift of spectrum, Auger recombination and carrier delocalization are the main reason for lower efficiency.
当阱宽较大时，能级填充是导致光谱红移的主要原因，俄歇复合与载流子离域是导致效率下降的主要原因。
But as the well width increase, level filling is the main reason for the red-shift of spectrum, Auger recombination and carrier delocalization are the main reason for lower efficiency.
当阱宽较大时，能级填充是导致光谱红移的主要原因，俄歇复合与载流子离域是导致效率下降的主要原因。
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