FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
The superposition of all these elements results in a typical drain-source voltage shown in Fig. 16.
把这些原理按时序整合呈现出图16所示的典型漏源极电压。
The hard switching approach (as shown in Fig. 26) doesn't consider the minimum drain-source voltage.
硬开关(图26所示)几乎不考虑漏源极电压的最小值。
The spectra of the main elements of the drain-source voltage can be found in Fig. 20.
图20描述了漏源极电压主要原理产生的电磁干扰频谱。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
Fig. 3 - histogram. A vertical histogram shows the signal density as a function of voltage, and helps to visualise noise.
图3——直方图，垂直直方图做为电压功能显示了信号密度，并有助于噪音可视化。
Fig. 4 Relationships of brightness-voltage of organic Fig. 5 Relationships of efficiency-voltage of organic light-emitting device. Light-emitting device.
图4、有机电致发光器件的电压-亮度关系曲线图5、有机电致发光器件的电压-效率关系曲线。
Fig. 4 Relationships of brightness-voltage of organic Fig. 5 Relationships of efficiency-voltage of organic light-emitting device. Light-emitting device.
图4、有机电致发光器件的电压-亮度关系曲线图5、有机电致发光器件的电压-效率关系曲线。
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