In VGF crystal growth procedure, the crystal growth rate depended on the temperature at control point and the cooling rate.
VGF技术生长晶体时,晶体的生长速率主要取决于控温点的温度及降温速率。
Also, VGF and VB-based substrates made up 64 percent of wafer output in 2007 and this will increase to 75 percent through 2012.
而且,2007年基于VGF和VB衬底占到了晶片产量的70%,到2012年这一数字有望提高到75%。
Also, VGF and VB-based substrates made up 64 percent of wafer output in 2007 and this will increase to 75 percent through 2012.
而且,2007年基于VGF和VB衬底占到了晶片产量的70%,到2012年这一数字有望提高到75%。
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