A static verification methodology for circuit design-flow of ASIC's based on very deep sub-micron CMOS technology is described in the paper.
介绍了基于深亚微米cmos工艺asic电路设计流程中的静态验证方法。
The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub-micron realm.
DSOI器件的衬底热阻和体硅器件非常接近，并且在进入到深亚微米领域以后能够继续保持这一优势。
The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub-micron realm.
DSOI器件的衬底热阻和体硅器件非常接近，并且在进入到深亚微米领域以后能够继续保持这一优势。
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