If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.
同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。
Glass passivated junction rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 1.0 a.
玻璃钝化结整流。最大重复峰值反向电压600V最大平均正向整流电流1.0 A。
In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence.
在中子辐照环境下，变容二极管c—V特性发生变化，在给定偏置下，结电容随中子注量的增加而下降。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
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