The third stage etching in current method is a time-fixed etching, which easily causes under etching or over etching of the metal layer.
现有的刻蚀形成金属线时的第三阶段刻蚀采用了固定时间的刻蚀，极易造成金属层刻蚀不足或过刻蚀的问题。
The influence on over etching and under etching to IC layout is analyzed, the computation model and realization method of IC critical area are presented.
论文在分析过刻蚀和欠刻蚀对IC版图影响的基础上，提出了基于工艺偏差影响的IC关键面积计算新模型和实现方法。
Under this etching condition the sensitivity and the efficiency of the Fuji film for the registration of protons have been determined.
在此蚀刻条件下，测定了富士膜记录质子的灵敏度和效率。
The contact bulges under the bridge are achieved by the full etching and partial etching of the polyimide sacrificial layer.
在工艺上，特别采用了对聚酰亚胺牺牲层进行全刻蚀和半刻蚀的改进加工流程来实现桥背面的接触点。
This result is just opposite from the ion implantation enhanced etching which was reported by many authors under wet etching.
这一结果与所报道的离子注入增强腐蚀的结果正好相反。
In the third chapter Porous silicon was prepared by pulsed and dc electrochemical etching methods under the equivalent etching condition.
第三章研究了用脉冲电化学腐蚀制备均匀发光多孔硅。
The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied.
利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀， 并研究了刻蚀机理。
The etching of CVD diamond thick films was accomplished by the ECR plasma under optimized pressure conditions and the etching mechanism is studied.
利用该等离子体在优化的气压条件下对化学气相沉积金刚石膜进行了刻蚀， 并研究了刻蚀机理。
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