A single stress liner (120) is applied over different type semiconductor devices.
在不同类型的半导体器件之上施加单应力衬里(120)。
The invention discloses a light-emitting element, including a first conductivity type semiconductor layer;
一种发光元件，包括：第一导电型半导体层；
A dynamics model and the relevant equations describing transport of photocarriers in PC-type semiconductor detectors are established.
提出了光导型半导体探测器内载流子输运的动力学模型及方程组，并对方程组进行了数值求解。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
Which use MQ-2 combustible gas sensor-type semiconductor sensors to achieve smoke smoke detection, high sensitivity, fast response, strong anti-interference, etc, and the price low, long service life.
其中选用MQ-2型半导体可燃气体敏感元件烟雾传感器实现烟雾的检测，具有灵敏度高、响应快、抗干扰能力强等优点，而且价格低廉，使用寿命长。
He then set out to make a new type of semiconductor crystal that would be able to emit visible, red light.
之后他就开始着手研制一种新型的可以发出可见红光的晶态半导体。
In lab the most often used is electron multiplier and semiconductor type.
实验室常用的是电子倍增器和半导体型光二极管。
As a new type of fluorescence materials, semiconductor quantum dots (QDs) have many advantages over the traditional materials.
半导体量子点作为一种最新型的荧光材料，与传统的荧光材料相比具有多种优势。
A new type of surface emitting semiconductor laser diodes is fabricated.
研制成功一种新型混合式面发射半导体激光器。
At present the common used alcohol sensor is fuel cell type and semiconductor type, with weakness being either high price or poor selectivity and demanding the heat device.
目前常用的燃料电池型和半导体型乙醇传感器具有价格高或选择性差、需要加热装置的缺点。
This paper introduces a simple and easy temperature measuring and controlling system made up of a new -type temperature-measuring integrated circuit DS1820 and semiconductor refrigerator.
介绍了一种使用新型测温集成电路ds1820和半导体致冷器件组成的简单精巧的温度测控系统。
The type, reaction mechanism and application of nano sized semiconductor photocatalyst are reviewed. The improvement of photocatalyst is also discussed in brief.
对半导体光催化剂的类型、作用机理、应用及其性能改进作了综合评述。
In experiment, it was found that temperature increasing of original OPS-VECSEL is very serious with increasing pumping power a new type of semiconductor laser.
实验中发现，传统结构的光泵浦垂直外腔面发射半导体激光器，随着泵浦功率密度的增加，器件的温升现象严重。
Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxides. They have non-linear resistance that changes as a function of applied voltage.
型压敏电阻器是以氧化锌为主要原料制造的半导体陶瓷元件，其电阻值随施加电压的变化而呈非线性变化。
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.
利用金属有机气相淀积方法生长了一种新型吸收体：高反射率半导体可饱和吸收镜。
Type MYGJ varistors are made of semiconductor ceramic material composed mainly of zinc oxides. They have non-linear resistance that changes as a function of applied voltage.
MYGJ高能型压敏电阻器是以氧化锌为主要原料的半导体陶瓷元件，其电阻值随施加电压的变化而变化。
Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device.
具有二氧化硅类玻璃薄层的无机基底，制备前述基底的方法，涂布剂和半导体器件。
The conduction characteristic for determining this is a combination of material type of the semiconductor, crystal plane, orientation, and strain.
用于确定此点的传导特性是半导体材料类型、晶面、取向以及应变的组合。
Thereafter a second semiconductor region (8) of the first conductivity type, comprising, for example, an emitter region, is formed on a part of the base region (7).
然后在基极区（7）的一部分上形成包括比如发射极区的第一导电类型的第二半导体区域（8）。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
A new type technique of semiconductor cleaning is studied via infrared absorption spectra, X ray photoelectron spectra and surface tension detector.
报道了利用红外吸收谱、X射线光电子谱和表面张力测试仪对新型半导体清洗工艺进行研究的结果。
More than 200 times faster to access than flash memory, FeRAM is a type of nonvolatile memory that has many possibilities for use as next-generation semiconductor memory.
铁电存储器的存储速度比闪存的存储速度快200多倍，是一种极有可能成为下一代半导体存储器的非易失性存储器。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.
此外，该多阶式栅极结构另包含多个掺杂浓度不同的掺杂区，设置在该多层阶梯结构下方的半导体基板中。
The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region.
该晶体管还包括第一导电类型的漏极区，该漏 极区与不同于第一半导体区的第二半导体区电连通。
Accordingly, a semiconductor device which is composed of conductivity type transistors that are identical and which is not affected by a noise and a display device including it are provided.
由此，提供包括相同导电型的晶体管的、能够降低噪声的影响的半导体装置和具备该半导体装置的显示装置。
The amplitude distribution of narrow hand semiconductor noise in junction type OC70, OC71 and point contact type 2N32A transistors were measured experimentally by the "maximum amplitude" method.
本文中描述用振幅峰值的方法，测量面接触型晶体管OC70，OC71和点接触型晶体管2N32A内窄频带低频率噪声的振幅分布。
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
Semiconductor arrester is a new type of surge protection device, which, however, has a large interelectrode capacitance, thus limiting its application in high frequency systems.
半导体放电管是新一代抗浪涌保护器件，极间电容是其应用到高频环境下的一个限制因素。
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