The numerical simulation results show the quantum limit of the quantum well width, beyond which will observe the resonant tunneling phenomena.
数值模拟结果给出这类电子器件的量子极限——可观察到共振隧穿现象的量子阱宽度的限度。
Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.
最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
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