• The present invention has low trigger voltage of SCR, can adjust freely in corresponding range and has hyperpyrexia breakdown current.

    本发明的可控硅触发电压低,能在相应范围内自由调整且具有高热击穿电流。

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  • The operation of the timer can be modified by modulating the internal threshold and trigger voltages, which is accomplished by applying an external voltage (or current) to CONT.

    调整内部极限和扳机电压可以修正定时器的操作,扳机电压是通过将外部电压(或电流)应用于CONT来实现的。

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  • The trigger wheel rotates with engine RPMs and causes the speed sensor, or pickup oil, to produce triggering voltage pulses that correspond to engine speed and piston position.

    触发叶轮随发动机转速而旋转,使得转速传感器或拾波线圈产生与发动机转速和活塞位置相对应的触发电压脉冲。

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  • A cosine phase shifter is applied in phase shifting circuit to meet the possible maximum trigger current and voltage of thruster.

    移相线路中配有与弦移相器以满足可控硅整流器最大可能触发电流和电压。

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  • The zero voltage trigger for thyristor can be realized with simple transistor circuit.

    单向晶闸管的电压过零触发可利用简单的晶体管电路。

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  • The shift trigger pulse of the thyristor trigger circuit with integration amplifier is generated by comparing directly principle of three-phase AC and shift-phase control voltage.

    该晶闸管触发器采用集成运数放大器,移相触发脉冲的形成是根据三相交流电的各相与移相控制电压直接比较原理实现的。

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  • When the voltage applied to anode again becomes positive the gate will trigger the SCR on again.

    当施加到阳极的电压再次变为正的栅极将再次触发可控硅上。

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  • Compared with half peak voltage level trigger manner, the measurement accuracy is improved significantly and the application field of digital optical screen is expanded.

    与传统的峰值一半电平触发方式相比,能够显著提高测试精度,从而扩大了光幕靶的使用范围。

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  • The high voltage endurance test device for switch tube is composed of high voltage pulse generator, high voltage breakdown detector, trigger, auto-controller and DC/AC converter.

    开关管冲击耐压装置由高压脉冲产生器、击穿检测器、触发器,及自动控制器、DC/AC变换器等构成。

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  • Such a hit could result in erroneous voltage readings that trigger a reboot, NASA said.

    这样的击中可能会导致错误的电压读数而触发重新启动,美国航空航天局说。

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  • The vacuum trigger tube is a kind of fast pulse switches applicable for high voltage and current.

    产品规格︰ 真空触发间隙是一种高电压,大电流快速脉冲开关。

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  • The main control system includes the synchronous signal generating circuit, the testing circuit of thyristor cut-off voltage and the trigger circuit of the thyristors etc.

    论述了主要硬件电路的设计方案,其中包括晶闸管两端电压检测、三相电源同步信号检测等。

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  • Full wave controlled rectification voltage or controlled bridge rectification voltage can be generated under the controlling of a special trigger circuit.

    该电路在特殊触发电路的作用下,其输出端可产生全波可控整流电压和全控桥式整流电压。

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  • The principle of voltage linear digital triggering of thyristor by EPROM is described and it is discussed to solve the frequency disturbance on digital trigger by phase locked loop .

    描述了用EPROM实现晶闸管电压线性触发原理,讨论了用锁相环解决数字触发的频率扰动问题。

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  • A scheme of bidirectional thyristor phasing trigger composed by ICs is presented, and the trigger circuit fit for AC voltage regulator of inductive load is given.

    提出了一种由集成电路组成的双向晶闸管移相触发器的设计方案,给出了适合于感性负载的交流调压电源的触发电路。

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  • Firstly, based on the selecting of trigger methods' and ascertaining of the phase shift range of ac voltage-regulate soft starter, reliability of each trigger method is researched.

    首先,从触发方案选择和移相范围的确定两方面出发,研究了各触发方案的可靠性。

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  • The trigger circuit of voltage supply is designed, and the intelligent control is used to trigger the igniting gap.

    设计并制作了电压源点火回路,对球隙点火进行智能控制;

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  • The voltage is changed by varying trigger angle of the rectifier , pulse distribution implemented by software, and all control conducted on computer TP 801 so as to fully digitalize the whole system.

    随后采用可控硅整流加滤波的电路对步进电机供电,用改变可控硅触发角的大小来改变供电电压,并用软件实现步进步机的脉冲分配,全部控制用单板机来实现,使整个系统完全数字化。

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  • The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.

    在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容:稳压器,霍尔电压发生器,小信号放大器,施密特触发器和NMOS输出晶体管。

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  • The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.

    在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容:稳压器,霍尔电压发生器,小信号放大器,施密特触发器和NMOS输出晶体管。

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