The flat bottom gate provides full perimeter seating against the seat, eliminating pocket in the bottom of the seat that can trap process media and prevent the valve from fully closing.
平坦的闸板底部与阀座之间能够实现全周长阀座密封，避免阀座出现可能淤积流体介质、妨碍阀门完全关闭的底部洞隙。
Both gate and field oxides generally are grown by a thermal oxidation process because only thermal oxidation can provide the highest-quality oxides having the lowest. interface trap densities.
这两个栅和场氧化层都是通过热氧化过程生长出来的，因为只有热氧化才可以提供具有低陷阱密度性能最好的氧化层。
TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。
We have proposed a simple method to realize CN gate in an ion trap system.
我们提出了一种在离子阱中实现cn门的简单方法。
With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.
借助界面态建立的H~+两步模型和F在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。
With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.
借助界面态建立的H~+两步模型和F在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。
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