Note: P1.0 port by the MCU output audio signal, the P1.0 port access transistor to drive the speakers, the best form with two Darlington transistor structure.
说明：由单片机的P1.0口输出音频信号，在P1.0口接三极管以驱动喇叭，最好用两个三极管构成达林顿结构。
The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
讨论了采用级联双极性晶体管结构的超宽带极脉冲发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。
A transistor radio is a less complicated structure than a TV.
晶体管收音机的结构不像电视那样复杂。
As an example, an electron wave diffraction transistor is presented, including its principle, structure, performance and its fabrication.
作为一个例子，介绍了电子波衍射晶体管的原理、结构、制造和性能。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Summarizing the basic structure and fundamental of the thin film transistor liquid crystal display.
概述了薄膜晶体管液晶显示器基本结构与原理。
The main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested.
对双极晶体管结构和关键性能参数进行了研究和设计，并进行了流片测试。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
主要结论为通过合理地安排工艺步骤，能够在对原有结构不产生影响的情况下，得到性能令人满意的纵向PN P晶体管。
Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。
The fine structure and the thin-film transistor can be integrated on the one insulating surface in one step.
这种微细结构和薄膜晶体管可以在一个步骤中集成在一个绝缘表面上。
The article introduces the development process of the complex transistor of high impedance, including the design of structure parameter, artwork layout and the development result.
本文介绍了高阻抗复合管的研制过程，包括结构多数的设计，工艺设计，以及研制结果。
No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure.
谐振峰是限制激光二极管性能的因素之一，而在这种晶体管激光器结构中，没有观察到明显的谐振峰。
The invention provides a transistor capable of self-aligning top gate structure and a method of manufacturing the same.
提供了一种具有自调整顶栅结构的晶体管及其制造方法。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
Per above said, it is possible to improve PNP transistor by modifying the existing structure, increasing process complexity while maintaining original device's performance.
基于上述分析，在对传统的结构进行修改之后，以增加工艺复杂性为代价，在保证原有结构的情况下，能够得到性能令人满意的纵向PN P晶体管。
A membrane transistor, including a semiconductor layer, an inner-island shaped structure composed of the upper semiconductor layer and the lower semiconductor layer.
本发明主要是提供一种薄膜晶体管，其包括有一半导体层、一下重掺杂半导体层与一上重掺杂半导体层构成的内岛状结构。
Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate circuit.
其与非门电路不仅全部由npn型晶体管构成，且结构非常简单，容易做成集成电路。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
A low noise four transistor pixel structure was designed based on SMIC 0.
m工艺设计了一种低噪声的四管像素结构。
In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure.
在一实施方式中，晶体管可包括具有主表面的半导体层和传导结构。
The method can be utilized for transistor laser structure design.
该方法可用于晶体管激光器的设计。
The method can be utilized for transistor laser structure design.
该方法可用于晶体管激光器的设计。
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