The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
In the schematic above, I used the transistor constant current source example.
在下列电路图中，我使用了一个晶体管恒流源负载的例子。
In the schematic above I used the transistor constant current source example.
在下列电路图中，我使用了一个晶体管恒流源负载的例子。
At the same time more than in 5 times is reduced current leak from the source to the drain, ie is reduced the energy consumption of transistor.
在同一时间，多在5倍，是减少泄漏电流，从源头上向外流，即是减少了能源消耗的晶体管。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
The power source used 14 power file effect transistor MOSFET in power transformer second order; all the combinations of twist-coil could construct 18 different second orders.
供电电源则将14只功率场效应晶体管MOSFET接入电源变压器次级，两绕组的全部组合可构成18个不同扎数的次级。
The gate source breakdown performance of static induction transistor was studied experimentally.
对静电感应器件的栅源击穿特性做了实验研究。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
相应地，该晶体管的阈值电压及栅源极电压也可降低。
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
Interior transistor cells, but not the peripheral transistor cells, each further include a source region of the first conductivity type in the body region adjacent to the trench.
每个内部晶体管单元(不是外围晶体管单元)还包括第一导电型的源区，其位于与凹槽相邻的体区中。
The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.
所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
An uninterrupted power source (UPS) with VMOS transistor inverse transformer is proposed.
本文介绍一种全自动不间断逆变电源。
A depleted NMOS transistor, which was used as current source, and a negative feedback loop constitute a stable voltage reference.
该电路采用耗尽型NMOS管作电流源器件，结合负反馈，实现了稳定的电压基准。
Thus, operating even under lower voltage of power source, each transistor can still be operated at saturation region normally.
因此即使在低电源电压操作下，各晶体管仍可正常地在饱和区工作。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
A pixel for compensating for the threshold voltage of a drive transistor and the voltage drop of a first power source are provided.
所述像素用于补偿驱动晶体管的阈值电压和第一电源的压降。
One terminal of the NAND string is connected to a corresponding bit line via a select transistor SGD, and another terminal is connected to the c-source line via a second select transistor SGS.
NAND串的一个端子经由选择晶体管SGD连接到相应的位线，且另一端子经由第二选择晶体管s GS连接到c源极线。
The source is put up the circuits with the soft start and overcurrent protection to prevent the switching-transistor from breakdowning.
电源还设置了软起动及过流保护电路，以防逆变功率开关管的损坏。
The source is put up the circuits with the soft start and overcurrent protection to prevent the switching-transistor from breakdowning.
电源还设置了软起动及过流保护电路，以防逆变功率开关管的损坏。
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