Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The transistor gate may be formed from first and second gate conductors with different work functions.
晶体管栅极可以由具有不同功函数的第一栅极导体和第二栅极导体形成。
The transistor gate has a distinct advantage over the diode gate in that the transistor amplifies, as well as acts as a gate.
晶体管门电路比起二极管门电路来有一个显著的优点，那就是晶体管除了起门的作用外还能够放大。
The transistor gate has a distinct advantage over the diode gate in that the transistor amplifies, as well as acts as a gate.
晶体管门电路比起二极管门电路来有一个显著的优点，那就是晶体管除了起门的作用外还能够放大。
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