Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
In this paper, the transistor one dimensional DC current-voltage equation which is indicated as circuit parameters is derived.
本文推导了用电路参数表示的晶体管一维直流电流—电压方程。
In this paper, the transistor one dimensional DC current-voltage equation which is indicated as circuit parameters is derived.
本文推导了用电路参数表示的晶体管一维直流电流—电压方程。
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