This paper describes the three dimensional numerical analysis of current gain for the lateral transistor with multiple collectors by using the finite difference method.
本文叙述了用有限差法对多集电极横向晶体管电流增益进行三维数值分析。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.
据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。
Based on the theoretical model, a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.
据此理论模型研制成功了电流增益温度特性优良的中小功率晶体管系列。
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