The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
The transistor comprises a first and a second electrode (2, 6) and base electrode (6) to control current flow between the first and second electrode.
该晶体管包括第一和第二电极(2,6)、以及控制第一和第二电极之间的电流的基极电极(6)。
The transistor comprises a first and a second electrode (2, 6) and base electrode (6) to control current flow between the first and second electrode.
该晶体管包括第一和第二电极(2,6)、以及控制第一和第二电极之间的电流的基极电极(6)。
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