The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.
但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。
应用推荐