Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
由于多晶硅回刻蚀至比整个器件的硅的表面低,通常不再需要多晶硅掩模,从而节省了制造成本。
Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
由于多晶硅回刻蚀至比整个器件的硅的表面低,通常不再需要多晶硅掩模,从而节省了制造成本。
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