In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.
为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。
Kore son of Imnah the Levite, keeper of the East Gate, was in charge of the freewill offerings given to God, distributing the contributions made to the Lord and also the consecrated gifts.
守东门的利未人音拿的儿子可利，掌管乐意献与神的礼物，发放献与耶和华的供物和至圣的物。
Hou Ying was over 70 years old. He and his family were very poor, and he himself was an official of low rank who was in charge of the city gate of Daliang, the Wei capital.
当时，信陵君听说大梁城门的守门官七十岁老人侯嬴是个贤人，家境贫穷，便派人带着大量财宝，前去聘请他。
We arrived; and as I was trying to pass, the man in charge of the gate said: "Where from?"
我们到达那里，刚想走进去，有个男人挡在门口，问：“从哪里来？”
Most areas that charge for parking (where you have to pay for the parking) have some sort of security gate to stop you from going in without paying or without permission.
大部分地区的停车车位都收费你必须为停车收费这些地区设有某种安检门，如果你没有支付费用或未经许可，它会阻止您进入其中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
Despite the fact that many fans have waited outside the gate of the booking office, many of them will still be told that the tickets are available only to the first 100 people free of charge.
尽管许多粉丝 在售票厅前等了很久，但他们中的绝大部分仍将被告知只有前 100人能免费拿到门票。
By changing the gate voltage, one can adjust the profile and position of the static potential soliton and then have an effective control of charge solitons.
通过调节门电压可以较好地控制静电势孤子的形状及其位置，从而达到对电荷孤子的有效控制。
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
It is shown that, as the gate length decreases, the gap width between the gates increases and the depth of the channel becomes shorter, the transmitted charge handling capacity will drop from 6.
结果表明，随着栅长减小、栅间隙长度增加和沟道深度减小，传输栅电荷容量约从6。
The charge injection is modulated by the gate field.
通过所述栅极场来调制电荷注入。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
The charge trapping structure is disposed between the gate and the fin structure.
电荷陷入结构设置于栅极与鳍状结构之间。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
During a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.
在读取操作期间，该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
This suggests that the prices those firms in turn charge retailers will rise even higher than the 10% annual increase in June, which was the highest rate of factory-gate inflation since early 1982.
但即使是他，也肯定不期待“没有通胀伴随的高速增长”会以这样一种稍显发酸的味道结尾。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
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