It has the advantage of accuracy, rapidity, non touching and is suitable for measuring the temperature of substrate in vacuum coating plants.
它具有测量准确、反应速度快、非接触等特点，尤其适用于测量真空镀膜中基板的温度。
Single pass laser surface of the specimens using powder feeding method were obtained by varying the powder feeding rate and the preheating temperature of the substrate.
通过改变送粉激光熔覆过程中的扫描速度、送粉速率、基体预热温度等工艺参数，获得了单道激光熔覆层。
Water evaporation was used to control the temperature of the substrate with compensation of water loss by adding water.
藉水分蒸发以控制基质的温度，而添加水分以补充损失的水分。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
Different structures can be made by varying the furnace temperature and using different treatments of the substrate.
通过调整炉温和基底处理方法可以制造不同的结构。
The distribution of temperature was given at different times for coating and substrate.
给出了涂层和基体在不同时刻的温度场分布和变化规律。
By microwave designing for substrate heating materials, the larger uniform temperature field areas than the diameter of substrate holder in MPCVD device is obtained.
通过对基片加热材料的微波设计，在MPCVD装置中获得大于基片台直径的均匀温度分布区。
It was shown that, internal stress of nano-diamond films increased with increasing methane concentration, higher substrate temperature and longer deposition time.
结果表明，随着甲烷浓度的升高、衬底温度的升高以及沉积时间的延长，金刚石涂层中的压应力增大。
If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶，它对SO I器件的制作是有意义的。
For preparing large area CIO films with low resistivity and high transmissivity, we studied the effect of oxygen density and substrate temperature on optical and electrical properties, respectively.
为了制备低电阻率、高透射率的大面积CIO薄膜，我们分别研究了溅射氧浓度和沉积衬底温度对CIO薄膜光电特性的影响。
We optimized the concentrations of substrate, NADPH and enzyme, temperature as well as time.
对反应底物、NADPH、酶浓度以及反应最佳温度和时间进行了优化。
Because of the limitation of non uniformity correction, former microbolometer needed to control substrate temperature accurately.
由于非均匀性校正的局限性，以前的微测辐射热计需要对基底温度进行精确控制。
The electrical and optical properties of the films were found to depend on the oxygen concentration in the gas mixture and the substrate temperature as well as the post-deposition heat treatment.
实验结果表明，这种薄膜的电学和光学性质依赖于混合气体中的氧浓度、衬底温度以及沉积后的热处理。
The results show that the calcining temperature of the anode substrate strongly affects the electrical properties of LSGMC films.
研究结果表明，阳极基体煅烧温度对LSGMC膜的电学性能具有强烈的影响。
The effect of substrate materials and its temperature on film micro structure is studied.
研究了衬底材料、基片温度对膜微结构的影响。
Structural, optical and electrical properties of the film dependence of substrate temperature are investigated in detail.
对制备薄膜的结构和光电性质及衬底温度的影响进行了详细的研究。
The experimental results show that the orientation of PZT thin films can be changed from (111) to (100) by precisely controlling the substrate temperature.
实验表明，PZT薄膜的取向由(111)到(100)的改变可以通过精确控制基片温度来实现。
Investigated were the effects of substrate temperature on the structures and surface morphology, dielectric properties of films.
研究了衬底温度对薄膜结构、表面形貌以及介电性能的影响。
Therefore, the substrate temperature was the main factor which obviously affected the atoms distribution and step coverage of Al thin films.
衬底温度决定原子的表面迁移率，衬底温度是影响淀积的铝膜的均匀性和台阶覆盖能力的主要因素。
Molding pressure, Sinter temperature in advance and the velocity of temperature raised are the main factors for the matching of anode substrate and thin film YSZ electrolyte.
影响阳极基底与YSZ电解质薄膜共焙烧匹配性的主要因素是成型压力、预焙烧温度和焙烧升温速率。
We also investigate the effect of the substrate temperature in the nucleation stage on the FTIR absorption peak position and compressive stress in the thin films.
还研究了成核阶段衬底温度对薄膜立方相红外吸收峰峰位的影响。
It is found that the temperature gradient of solidifying front edge could be reduced by reducing focused lamp intensity and increasing substrate temperature.
发现适当降低聚焦加热灯强度、提高衬底加热温度可以降低固化前沿温度梯度，从而降低亚晶界等缺陷密度。
It is also found that replacement of substrate and adjustment of film stack structure would lead to the change of drift, this will enhance the temperature stability of filter.
同时经过计算分析发现通过更换膜系基板和调整膜系结构可以改变滤光片中心波长的漂移，这个结果有助于提高滤光片的温度稳定性。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
考察了离子束流密度和基底温度对薄膜性能的影响。
Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.
对应更高的衬底温度，因薄膜中的氢不能完全中止纳米晶粒界面的悬键，使薄膜能带带尾加宽。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
Coating and the substrate surface temperature of the coating would have a bad contraction stress, caused by cracking and peeling off the coating.
涂层与基体表面的温度差会使涂层产生收缩应力，引起涂层开裂和剥落。
The formation and disappearance of intermediates are largely affected by the reaction temperature and substrate concentrations.
反应温度和底物浓度对中间体的形成和消失有较大的影响。
The formation and disappearance of intermediates are largely affected by the reaction temperature and substrate concentrations.
反应温度和底物浓度对中间体的形成和消失有较大的影响。
应用推荐