Only a temperature dependence.
仅仅依赖于气体温度。
Because it has a strong temperature dependence.
因为它很有很强的温度依赖性。
There's another temperature dependence here.
这也是依赖于温度的。
Temperature dependence. That's, can give rise to problems.
温度的依赖带来了这个问题。
Now I'm just going to sketch the full temperature dependence.
现在我要画一幅草图，完全受温度影响的。
Ignore the temperature dependence and take it outside of the integral.
忽略它对温度的依赖关系，把它从积分里提出来。
This paper describes pulse delay-temperature dependence in fibre.
本文介绍光纤中脉冲时延与温度的关系。
The temperature dependence of frequency characteristics of PET is researched on.
研究了低温多晶硅发射极晶体管的频率特性及其温度关系。
The results show that the temperature dependence of rate constants is complicated.
结果表明，整个反应的速率常数受温度的影响较为复杂。
The calculation method is derived from the temperature dependence of the electrical resistivity.
根据电阻率随温度变化规律推导了计算被测物体电阻率的通用计算公式。
Next time we'll talk about the temperature dependence and the pressure dependence of equilibrium constants.
下次我们会讨论平衡常数对温度,和压强的依赖关系。
The calculation method is derived from the temperature dependence of the thermal expansion coefficient.
的计算方法是来自的热膨胀系数的温度依赖性的。
But it turns out, if you raise the temperature, kinetics is wonderful in terms of the temperature dependence.
但是如果你提高温度，动力学有很好的温度依赖关系。
A new method to improve the temperature dependence of polycrystalline silicon pressure sensor is presented.
提出了一种新的改善传感器温度特性的方法。
The temperature dependence of probe was also studied and the rotation relaxation time of probe was calculated.
并研究了温度对探针荧光偏振的影响，计算了探针的旋转松驰时间。
This paper describes pulse delay-temperature dependence in fibre. Some ambiguity is also clarified in this paper.
本文介绍光纤中脉冲时延与温度的关系。文中还澄清一些易弄混的概念。
Now, a project has been started to evaluate the temperature dependence of the solubility for the various precursors.
现在，一个项目已经开始进行评估的温度依赖性的溶解度的不同前体。
This reduced temperature dependence permits a simplified drive circuit and reduces the need for temperature stabilization.
与温度的关系变得不密切，也就使驱动电路简化并减少对温度稳定的要求。
This model is based on the thermoelastic mechanism and can take the temperature dependence of material properties into account.
该模型以热弹激发机制为基础，同时考虑了材料热物理参数的温度依赖性。
The temperature dependence of exchange bias and coercivity of ferromagnetic layer and antiferromagnetic gain layer is discussed.
讨论了铁磁反铁磁双层膜中交换偏置和矫顽场随温度变化的关系。
The temperature dependence of exchange bias and coercivity of ferromagnetic layer and antiferromagnetic gain layer is discussed.
讨论了铁磁反铁磁双层膜中交换偏置和矫顽场随温度变化的关系。
The temperature dependence of the free volumes fraction and the rate of viscosity change can be calculated according to the obtained parameters.
利用得到的参数可计算玻璃中自由体积分数随温度的变化情况，并可计算得到的粘度变化速率。
The temperature dependence of Young's modulus and the internal friction for the cured epoxy resin is typical for a slightly crosslinked polymer.
杨氏模量及内耗温度谱的实验结果指出：环氧树脂具有典型微少交联高聚物的力学性貭。
The results indicate that the temperature dependence of ultrasonic attenuation in liquid hydrogen is mainly determined by volume viscosity effect.
实验结果表明，液氢的超声衰减的温度依赖特性主要取决于体积粘滞效应。
On the basis of this theory, we have investigated the temperature dependence of the resistivity in these systems within the one-phonon approximation.
根据这个理论我们详细讨论了这类系统电阻率的温度依赖性。
The results from the magnetoresistance measurements allow to determine the weak localization contribution to the temperature dependence of the resistivity.
由测量结果可确定弱定域化对电阻温度关系的贡献。
A method of measuring positron lifetime is used to investigate temperature dependence of positron trapping at defects in neutron-irradiated silicon crystals.
用正电子湮没寿命测量方法研究了在中子辐照硅单晶缺陷中正电子捕获的温度效应。
The experimentally measured temperature dependence of retrograde velocity of vacuum arcs can be explained by the ion jet model for retrograde motion of vacuum arcs.
实验测得的后退速度的温度关系可用真空电弧后退运动的正离子喷流模型加以解释。
The dielectric constant, pyroelectric coefficient, thickness extension vibration electromechanical coupling factor and their temperature dependence are investigated.
研究了它们的介电常数，热电系数，厚度伸缩振动机电耦合系数及其温度依赖性。
In this paper, the basic calculation principle of the temperature dependence of saturation magnetization (Ms) of magneto-optical recording film is briefly introduced.
介绍了计算磁光记录薄膜温度特性的基本原理，提出了RE - TM磁光记录薄膜温度特性计算的遗传算法。
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