The TCAD approach has become one of the most important methods in design and manufacture of silicon integrated circuits and discrete devices.
利用TCAD方法已成为集成电路和分立器件设计和制造的重要方法。
Finally, we use the TCAD tools to simulate the characteristics of tunneling FET (TFET) and compare the reliability issues with traditional MOSFET.
最后，我们用TCAD工具模拟了隧穿晶体管(TFET)的特性，考察了TFET器件的可靠性并与传统MOSFET做了比较。
The novel termination structure was simulated with TCAD(ISE). Simulation results showed that the novel structure featured excellent characteristics of optimized area and breakdown voltage.
采用TCAD（ISE）对该技术进行模拟，结果表明，该技术具有比较好的面积优化和击穿电压优化特性。
The robustness of this model is verified using ISE TCAD simulation tools. The breakdown voltage of a specific device is also calculated and the result is in good agreement with experimental data.
根据表面电场分布求解器件的击穿电压并与实际测试数据对比得到了较为一致的结果，证明了该模型的适用性。
The robustness of this model is verified using ISE TCAD simulation tools. The breakdown voltage of a specific device is also calculated and the result is in good agreement with experimental data.
根据表面电场分布求解器件的击穿电压并与实际测试数据对比得到了较为一致的结果，证明了该模型的适用性。
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