Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
It is hosted in the stratum of the group C of the Sinian system. Its deposit type belongs to the Niobium-Ta...
矿床赋存于震旦系C组地层中，中型规模，矿床类型为岩浆作用形成的白云母钠长石伟晶岩铌钽矿床。
It is hosted in the stratum of the group C of the Sinian system. Its deposit type belongs to the Niobium-Ta...
矿床赋存于震旦系C组地层中，中型规模，矿床类型为岩浆作用形成的白云母钠长石伟晶岩铌钽矿床。
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