The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved.
在该T型栅工艺中栅长和栅帽的尺寸分别进行控制，实现了较好的工艺可控性和较高的工艺成品率。
The invention also relates to an integrated circuit structure with multiple-gate transistors with reverse T-shaped fins.
本发明还提供了一种具有倒T形鳍片多重栅晶体管的集成电路结构。
The invention also relates to an integrated circuit structure with multiple-gate transistors with reverse T-shaped fins.
本发明还提供了一种具有倒T形鳍片多重栅晶体管的集成电路结构。
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