An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).
介绍了一种用于大功率IGBT厚膜驱动电路的380V系统输入、多路输出辅助开关电源。
The GTO drive source of the power stepping motor is made up of the new-type of switching elements—the Gate turn-off Controlled Rectifier (GTO).
功率步进电机的GTO驱动电源，采用了新型开关元件“可关断可控硅”（简称GTO）。
The nonlinear characteristics of semiconductor optical amplifier (SOA) have important applications for the all-optical switching, wavelength conversion, and optical logic gate.
半导体光放大器（SOA）的非线性特性在光开关、波长变换、光逻辑运算中有重要的应用。
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
Heat dissipation in MOS gate is in direct Proportion to its output switching activity.
MOS逻辑门电路的功率损耗与其门电路的输出翻转成正比。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
The switching element may be formed on the insulating substrate in a pixel region defined by gate and data lines adjacent to each other.
开关元件可以形成于像素区域中的绝缘衬底上，像素区域由彼此相邻的栅极线和数据线限定。
Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.
ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。
Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.
ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。
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