On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。
On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated.
在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。
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