In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
The electrical and optical properties of the films were found to depend on the oxygen concentration in the gas mixture and the substrate temperature as well as the post-deposition heat treatment.
实验结果表明，这种薄膜的电学和光学性质依赖于混合气体中的氧浓度、衬底温度以及沉积后的热处理。
In addition, the optical loss increases with substrate temperature rising.
此外，随着基板温度的提高，损耗也会有所增加。
This effect is very significant at low substrate temperature or high deposition rate.
而且能量的影响在较低的基片温度或是较高的沉积速率时更加显著。
The maximum attractive force, yield force and rupture force decrease with increasing substrate temperature.
针尖和基体之间的最大引力、屈服力和断裂力随着基体温度的增加而减小。
The output responsivity of uncooled microbolometer is nonuniform, and greatly influenced by the substrate temperature.
非致冷微测辐射热计具有较大不均匀性，并且输出响应受衬底温度影响很大。
Investigated were the effects of substrate temperature on the structures and surface morphology, dielectric properties of films.
研究了衬底温度对薄膜结构、表面形貌以及介电性能的影响。
Experimental results show that the deposition rate of silicon film strongly depends on silane pressure and substrate temperature.
实验结果表明，非晶硅的沉积速率与气室气压和基片温度密切相关。
Because of the limitation of non uniformity correction, former microbolometer needed to control substrate temperature accurately.
由于非均匀性校正的局限性，以前的微测辐射热计需要对基底温度进行精确控制。
The influences of substrate temperature on the microstructures, optical, and electrical properties of ZGO films have been studied.
研究了基体温度对ZGO薄膜的晶体结构、电学和光学性能的影响。
The crystallinity of the deposited films was enhanced by decreases of silane concentration or increases of the substrate temperature.
随着硅烷浓度的降低或衬底温度的升高，薄膜晶化程度增加。
Therefore, the substrate temperature was the main factor which obviously affected the atoms distribution and step coverage of Al thin films.
衬底温度决定原子的表面迁移率，衬底温度是影响淀积的铝膜的均匀性和台阶覆盖能力的主要因素。
The optical band gaps of the grown thin films declined and dark electrical conductivity increased with increasing substrate temperature, respectively.
实验所得薄膜的光学带隙和暗电导也随衬底温度升高而分别降低和升高。
The result shows that: The resistance of films are changed with substrate temperature and annealing conditions (annealing temperature and annealing time).
实验结果表明：通过控制基体温度和退火条件(退火温度及退火时间等)可以改变膜电阻。
The experimental results show that the orientation of PZT thin films can be changed from (111) to (100) by precisely controlling the substrate temperature.
实验表明，PZT薄膜的取向由(111)到(100)的改变可以通过精确控制基片温度来实现。
If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶，它对SO I器件的制作是有意义的。
It is found that the temperature gradient of solidifying front edge could be reduced by reducing focused lamp intensity and increasing substrate temperature.
发现适当降低聚焦加热灯强度、提高衬底加热温度可以降低固化前沿温度梯度，从而降低亚晶界等缺陷密度。
Our results exhibit that the optical and electrical properties of GZO thin films prepared by PLD method can be adjusted by the change of substrate temperature.
采用PLD方法制备gzo薄膜，衬底温度的改变可以对薄膜的光电性能起到调制作用。
It was shown that, internal stress of nano-diamond films increased with increasing methane concentration, higher substrate temperature and longer deposition time.
结果表明，随着甲烷浓度的升高、衬底温度的升高以及沉积时间的延长，金刚石涂层中的压应力增大。
To meet the demands of transparent electrodes of OLED devices, ITO films were deposited at low substrate temperature, and their performances were discussed in this paper.
本论文针对OLED器件透明电极的要求，对ITO膜的低温制备工艺进行了深入的研究。
This paper studies the nucleation mechanism of the target-facing sputtering, and the variation of island-density with such parameters as deposition time and substrate temperature.
本文研究了对向靶溅射薄膜的成核机理。给出了在薄膜的生长初期基板上的岛密度随生长条件（如沉积时间、基板温度）的变化。
In process parameters, the rf power and pressure affect the number, energy and composition of the basic elements, the substrate temperature effect the surface diffusion and atomic bonding.
工艺参数中，射频功率和压强综合影响了基元数量、能量以及成分，基片温度主要影响表面扩散、原子成键。
For preparing large area CIO films with low resistivity and high transmissivity, we studied the effect of oxygen density and substrate temperature on optical and electrical properties, respectively.
为了制备低电阻率、高透射率的大面积CIO薄膜，我们分别研究了溅射氧浓度和沉积衬底温度对CIO薄膜光电特性的影响。
Finally put the amount of the fermentation substrate, temperature, time, water content on quality of fermented products, and initially determined the optimum conditions of fermentation.
同时还研究了发酵基质投放量、温度、时间、含水率对发酵产品质量的影响，初步确定了发酵的适宜条件。
Finally put the amount of the fermentation substrate, temperature, time, water content on quality of fermented products, and initially determined the optimum conditions of fermentation.
同时还研究了发酵基质投放量、温度、时间、含水率对发酵产品质量的影响，初步确定了发酵的适宜条件。
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