In this paper, WO3 thin film was deposited on glass substrate and silicon slice by DC reactive magnetron sputtering and using metal tungsten as target.
本文采用直流反应磁控溅射工艺，以金属钨为靶材，在玻璃和单晶硅片上沉积了WO 3薄膜。
The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明公开了一种制造硅外延片的方法，即一种重掺砷衬底的硅外延方法。
The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate.
本发明公开了一种制造硅外延片的方法，即一种重掺砷衬底的硅外延方法。
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