SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self-bias.
鞘层电容的非线性变化导致了基片偏压的非线性变化。
The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self-bias.
鞘层电容的非线性变化导致了基片偏压的非线性变化。
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