Epitaxy of strained Si on the obtained SGOI substrate.
在获得的SGOI衬底材料上生长高质量应变硅材料。
The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.
本文主要研究应变硅空穴各机制散射几率及空穴迁移率与晶向、应力的理论关系。
The formation mechanism, energy band, hole density-of-state effective mass of strained si have been analyzed first., then hole mobility enhancement mechanism is analyzed.
首先分析了应变硅形成机理、能带结构变化、空穴态密度有效质量，进而分析了空穴迁移率增强机理。
The formation mechanism, energy band, hole density-of-state effective mass of strained si have been analyzed first., then hole mobility enhancement mechanism is analyzed.
首先分析了应变硅形成机理、能带结构变化、空穴态密度有效质量，进而分析了空穴迁移率增强机理。
应用推荐