We constructed a strain sensitive model through the analysis of the Ru-based thick film strain resistors tunneling barrier model.
通过分析钌基厚膜应变电阻的隧道势垒模型，提出力敏模型。
We interpreted this phenomenon through the strain sensitive model, and explained the other strain sensitive phenomenon, such as the GF mounts up with the barrier height' s augmention.
用力敏模型解释了这一现象，并解释了其他力敏现象，诸如应变系数随势垒高度的增大而增大。
We interpreted this phenomenon through the strain sensitive model, and explained the other strain sensitive phenomenon, such as the GF mounts up with the barrier height' s augmention.
用力敏模型解释了这一现象，并解释了其他力敏现象，诸如应变系数随势垒高度的增大而增大。
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