The amplifier employs cascode structure, and spiral inductors on chip.
放大器采用共源共栅结构，芯片内部埋置了螺旋电感。
The on-chip spiral inductors were utilized for the low noise performance and monolithic integration.
放大器采用片内集成的螺旋电感实现低噪声和单片集成。
Hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductors on si.
该模型可望用于硅基射频集成电路中电感的优化设计和进一步的理论探讨。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.
本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。
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