Additionally, Flexfet's unique MIGFET on SOI process creates an inherent radiation tolerance, which is extremely useful in avionics and space systems.
此外，Flexfet独特的MIGFET片上工艺具有固有的耐辐射性能，对于航空电子设备和空间系统非常有用。
DSOI, bulk si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.
通过局域注氧工艺，在同一管芯上制作了DSOI、体硅和SOI三种结构的器件。
The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
The fabrication process of a compact planar waveguide etched-grating(EDG) demultiplexer based on silicon-on-insulator(SOI) is studied.
研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺。
A new technology of smart cut using helium ion implantation to form SOI was presented. The process of smart cut was introduced and research results was demonstrated by means of XTEM in this paper.
报道了用氦离子注入智能剥离形成SOI结构硅片的新技术，介绍了这种技术的工艺和用剖面透射电镜研究的结果。
Combining the two processes, a compatible technology of SOI full dielectric isolation and complementary bipolar process is experimented. Vertical pup and npn transisto…
从实验的角度提出了一种SOI材料全介质隔离与高频互补双极工艺兼容的工艺途径。
The structure, which is fabricated on the SOI material, and its fabrication process have been designed based on the theoretical analysis.
传感器的结构建立在SOI材料上，在关键工艺中采用硅熔融键合技术。
Compared with traditional silicon process, SOI has higher speed, lower power dissipation, high integration, better isolation, less parasitic effects, higher reliability, etc.
与传统体硅技术相比，SOI技术具有高速、低功耗、高集成度、良好的隔离、寄生效应小以及可靠性高等优点。
Compared with traditional silicon process, SOI has higher speed, lower power dissipation, high integration, better isolation, less parasitic effects, higher reliability, etc.
与传统体硅技术相比，SOI技术具有高速、低功耗、高集成度、良好的隔离、寄生效应小以及可靠性高等优点。
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